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Title:
SEMICONDUCTOR MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2022019009
Kind Code:
A
Abstract:
To provide a growth technology for a Ge semiconductor thin film containing direct transition type Ge1-xSnx nanodots.SOLUTION: A Ge semiconductor thin film is an amorphous Ge (a-GFe) 2-based initial film containing metal nanoparticles 6 forming a eutectic system with germanium (Ge), and the metal nanoparticles further includes tin (Sn). The Ge semiconductor thin film converts the metal nanoparticles into nanoscale melt 7 by heating by applying energy using eutectic reaction, and includes Ge1-xSnx nanodots 8 formed by solidifying a nanoscale melt region in the subsequent cooling process.SELECTED DRAWING: Figure 3

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Inventors:
HARA AKITO
SUZUKI HITOSHI
Application Number:
JP2020122520A
Publication Date:
January 27, 2022
Filing Date:
July 17, 2020
Export Citation:
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Assignee:
TOHOKU GAKUIN
International Classes:
H01L21/203; C23C14/34; C30B1/10; C30B29/08; H01L21/208



 
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