To easily achieve shortening of the BT test time by controlling an internal circuit operation only at the time of conducting BT test of a semiconductor memory device having only a synchronous mode burst-operation.

Writing means 4, 9 are arranged to output a write instruction to a memory cell 12 based on a data entry signal DIN, and decoding means 5, 8, 10, 11 are arranged to decode the address input signal and output an address instruction to a memory cell 12. Moreover, a control means 7 outputs a signal to delay decode timing to decoding means 5, 10 based on a control signal 14 inputted at the time of burn-in test. With respect to the operation cycle of the signal by which the write instruction of the writing means 4, 9 is transmitted to the memory cell 12, the operation cycle of the decode timing is delayed and a late write cycle is eliminated.