Title:
薄膜形成方法
Document Type and Number:
Japanese Patent JP3687651
Kind Code:
B2
Abstract:
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.
Inventors:
Ko Won Young
Itunes
Itunes
Application Number:
JP2002503921A
Publication Date:
August 24, 2005
Filing Date:
June 08, 2001
Export Citation:
Assignee:
Zinitech Ink.
International Classes:
C23C16/18; C23C16/34; C23C16/36; C23C16/40; C23C16/455; C23C16/50; C23C16/515; H01L21/283; H01L21/285; H01L21/316; H01L21/3205; H01L21/768; H01L23/522; C23C16/44; H01L21/314; (IPC1-7): H01L21/316; C23C16/40
Domestic Patent References:
| JP4361531A | ||||
| JP2000054134A | ||||
| JP2001189312A | ||||
| JP7221048A | ||||
| JP11261028A | ||||
| JP200177112A | ||||
| JP2001152339A |
Foreign References:
| WO2000054320A1 | ||||
| WO2000152339A1 |
Attorney, Agent or Firm:
Takeshi Takada