Title:
RESIST PATTERN FORMATION
Document Type and Number:
Japanese Patent JPS5842229
Kind Code:
A
Abstract:
PURPOSE:To contrive the improvement of dimension accuracy by a method wherein dimension correction is performed by the irradiation amount of electron beams being decided so that a pattern element having the smallest dimension out of the patterns may become the irreducible necessary minimum residual film thickness. CONSTITUTION:When the minimum dimension of an exposing pattern element is l' and the irreducible minimum residual film thickness of necessity requested to resist is T2, irradiation amount A at the time of locating a curve representing the residual film thickness T2 at position P at pattern width l' is the irreducible necessary minimum irradiation amount. If the irreducible necessary minimum irradiation amount A is adopted, the final pattern width after exposure and development becomes L1, L2+X2, L3+X3, and L5+X5 respectively. Therefore, the exposure dimension of each pattern becomes L1, L2-X2, L3-X3 and L5 -X5. In this way, thickness exceeding the desired minimum residual film thickness T2 of resist is guaranteed only by the electron beam irradiation of unit irradiation amount to each pattern.
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Inventors:
FURUYA SHIGERU
MACHIDA YASUHIDE
NAKAYAMA NORIAKI
MACHIDA YASUHIDE
NAKAYAMA NORIAKI
Application Number:
JP13976281A
Publication Date:
March 11, 1983
Filing Date:
September 07, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/027; H01L21/30; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS5580318A | 1980-06-17 | |||
| JPS55140228A | 1980-11-01 |
Attorney, Agent or Firm:
Aoki Akira