【発明の名称】薄膜集積装置の安定化処理方法

Japanese Patent JP2539594

B2

PURPOSE:To enable to simply remove the defect part in a thin film element without affecting a semiconductor layer by a method wherein a low-resistance layer is provided in parallel to the semiconductor layer, and after that, a large current is flowed for removing the defect part in the thin film element. CONSTITUTION:The semiconductor layer 19 of a transistor Tr is formed using a vacuum evaporation method and a lift-off method. Then, the source and drain electrodes 21 and 20 of the transistor Tr are formed in the same manner. At this time, a low-resistance layer 22 is also formed simultaneously using the same material as that of the above-mentioned ones. After this, for removing first such a defect as pinholes in the dielectric thin film layer of the capacitor for accumulation, a large current is instantaneously turned on between the drain electrode 20 of the transistor Tr and the common bus bar and a dielectric breakdown in forcibly caused. At this time, the layer 19 can be prevented from destroying thermally, because the large current to run on the circuit almost flows to the layer 22 without passing through the layer 19. After the detect is removed, the low-resistance layer of the part of 23 shown by dotted lines is selectively etched, thereby enabling to obtain the desired thin film IC.

JPH0964372	TRANSISTOR AND ITS MANUFACTURE
JP2009111406	SYSTEM FOR TREATING SAMPLE
JPH0284720	PHOTOLITHOGRAPHY OF SILICON NITRIDE FILM

NOMURA KOJI
TERAUCHI MASAHARU
OGAWA KUNI
ABE ATSUSHI
NITSUTA KOJI

JP13793584A

October 02, 1996

July 05, 1984

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MATSUSHITA ELECTRIC IND CO LTD

H01L27/12; G09F9/30; H01L21/326; H01L21/479; H01L21/822; H01L27/04; H01L29/786; H05B44/00; (IPC1-7): H01L21/326; H01L21/822; H01L27/04; H01L27/12; H01L29/786

Matsumura Hiroshi

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