PURPOSE: To obtain disilane from monosilane at a high yield and a low-cost.
CONSTITUTION: In a process for producing disilane from monosilane comprising introducing gaseous monosilane into a reaction zone in which the gaseous monosilane is exposed to an electric discharge generated by a high-frequency current, (a) the monosilane is used in the form of a mixture with at least one inert gas selected from the group consisting of helium and argon, (b) the pressure of the gaseous mixture in the reaction zone is 0.1-3 bar and (c) the gaseous mixture is brought into contact in the reaction zone under the electric discharge with a wall cooled to a temp. which is sufficiently low for the saturation vapor pressure of the disilane to be negligible, but not so low enough for the monosilane to condense at the working partial pressure.
| JP3566522 | Plasma cleaning method in plasma processing equipment |
| WO/2023/227403 | SPIRAL PHOTOREACTOR |
| WO/1998/028223 | METHOD AND DEVICES FOR PRODUCING HYDROGEN BY PLASMA REFORMER |
BORUGU BUARURIE
DEIDEIE PIEERU
JIYURAN DANIERU
GASUTEIJIE MISHIERU
KARANTEI PIEERU
BUIREME ARAN
UIRUMOO ANTOWAANU
