Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59191336
Kind Code:
A
Abstract:
PURPOSE:To improve the characteristics of a passivation film by a method wherein the final passivation film consisting of a plasma-oxidized silicon film and a PSG film is formed. CONSTITUTION:The final passivation film consisting of a PSG10 and a plasma- oxidized silicon (P-SiO) film 11 is formed in the semiconductor device whereon a field insulating film 2, a gate insulating film 3, a gate electrode 4, a source and drain region 7, an interlayer insulating film 8 and an aluminum wiring layer 9 are formed. The molding stress-resisting strength and the dampproof property of an element can be obtained utilizing the strength and the dampproof property of the P-SiO film 11, and the stress given to the element by the P-SiO film 11 can be lessened using the PSG film 10. Also, no hot electron is not generated on the P-SiO film.
Inventors:
SUZUKI SHIGERU
Application Number:
JP6543583A
Publication Date:
October 30, 1984
Filing Date:
April 15, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; H01L21/314; H01L21/316; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)
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