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Patent Searching and Data


Title:
ION ETCHING DEVICE
Document Type and Number:
Japanese Patent JPS5985870
Kind Code:
A
Abstract:

PURPOSE: To obtain an ion etching device which provides good parallelism of an ion beam in an ion milling device by providing a magnetic field generation means for focusing ion in an etching chamber.

CONSTITUTION: An annular coil 12 for focusing ion which generates a magnetic field in a direction A is provided around a wafer holder 9 disposed in an etching chamber 3. An ion beam is bombarded to the wafer 8 on a holder 9 by an ion source of a Kaufmann type. The ion beam having extremely good parallelism is obtd. by conducting adequate electric current to the coil 12. A pattern having a desired sectional shape is obtd. with good uniformity in the processing a fine pattern on the wafer 8.


Inventors:
OOKODA TAKASHI
UMEZAKI HIROSHI
HOSAKA SUMIO
EDA AKIRA
OBARA TAKASHI
NOZAWA HISAO
NISHIDA HIDEKI
Application Number:
JP19475282A
Publication Date:
May 17, 1984
Filing Date:
November 08, 1982
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H01L21/306; C23F1/04; C23F1/08; C23F4/00; (IPC1-7): C23F1/08; H01L21/306
Attorney, Agent or Firm:
Toshiyuki Usuda