Title:
TRANSPARENT ELECTROCONDUCTIVE FILM, ITS MANUFACTURING METHOD, AND SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP3925977
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prepare a stannic-oxide based, transparent electroconductive film with low resistance and high excoriation resistance, to provide its manufacturing method, and a sputtering target.
SOLUTION: The stannic-oxide based, transparent electroconductive film containing gallium and indium, includes gallium of 0.1-30 mol% as Ga2O3 and indium of 0.1-30 mol% as In2O3 against the total volume of Ga2O3, In2O3, and SnO2, and a manufacturing method, and a sputtering target are also provided.
Inventors:
Akira Mitsui
Application Number:
JP3813397A
Publication Date:
June 06, 2007
Filing Date:
February 21, 1997
Export Citation:
Assignee:
Asahi Glass Ceramics Co., Ltd.
International Classes:
C01G19/00; C23C14/34; C23C14/08; H01B5/14; (IPC1-7): C23C14/08; C01G19/00; C23C14/34; H01B5/14
Domestic Patent References:
| JP60221569A | ||||
| JP4272612A | ||||
| JP60065760A | ||||
| JP61256506A | ||||
| JP3249171A |
Attorney, Agent or Firm:
Mamoru Tsunoda
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