Title:
A drive method of a semiconductor device, a program
Document Type and Number:
Japanese Patent JP6130199
Kind Code:
B2
Abstract:
An error of stored data is detected with high accuracy. Data (e.g., a remainder in a CRC) used for detecting an error is stored in a memory in which an error is unlikely to occur. Specifically, the following semiconductor device is used: a memory element including a plurality of transistors, a capacitor, and a data storage portion is provided in a matrix; the data storage portion includes one of a source and a drain of one of the plurality of transistors, a gate of another one of the plurality of transistors, and one electrode of the capacitor; a semiconductor layer including a channel of the transistor, the one of the source and the drain of which is connected to the data storage portion, has a band gap of 2.8 eV or more, or 3.2 eV or more; and the data storage portion stores data for detecting an error.
More Like This:
| JPS6331218 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| JPH0383412 | PROGRAMMABLE LOGIC ELEMENT |
| JPS60211959 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
Inventors:
Yasuhiko Takemura
Application Number:
JP2013091890A
Publication Date:
May 17, 2017
Filing Date:
April 25, 2013
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H03K19/177; G06F11/10
Domestic Patent References:
| JP2012074125A | ||||
| JP2007293856A | ||||
| JP2011172214A | ||||
| JP2005039210A |
Foreign References:
| US20120198312 |
Previous Patent: A paper information reading method of a printing machine
Next Patent: RADIATION IRRADIATING DEVICE
Next Patent: RADIATION IRRADIATING DEVICE