Title:
LASER DIODE
Document Type and Number:
Japanese Patent JP2023125769
Kind Code:
A
Abstract:
To provide a laser diode of a low oscillation threshold current.SOLUTION: A laser diode includes an Al-containing nitride semiconductor substrate, a semiconductor laminate part disposed on the nitride semiconductor substrate, and a first electrode. The semiconductor laminate part includes: a first conductivity type clad layer disposed on the nitride semiconductor substrate and including a nitride semiconductor layer of a first conductivity type; a first waveguide layer disposed on the first conductivity type clad layer; a light-emitting layer disposed on the first waveguide layer and formed of a nitride semiconductor including one or more quantum wells; a second waveguide layer disposed on the light-emitting layer; and a second conductivity type clad layer disposed on the second waveguide layer and including a nitride semiconductor layer of a second conductivity type. The semiconductor laminate part includes a resonator part, and contact parts where a part of the first conductivity type clad layer is exposed, two or more contact parts being disposed with the resonator part sandwiched therebetween. The first electrode is formed on the contact parts.SELECTED DRAWING: Figure 1
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Inventors:
YOSHIKAWA AKIRA
ZHANG ZIYI
KUSHIMOTO MAKI
SASAOKA CHIAKI
AMANO HIROSHI
ZHANG ZIYI
KUSHIMOTO MAKI
SASAOKA CHIAKI
AMANO HIROSHI
Application Number:
JP2022030047A
Publication Date:
September 07, 2023
Filing Date:
February 28, 2022
Export Citation:
Assignee:
ASAHI KASEI CORP
TOKAI NATIONAL HIGHER EDUCATION & RES SYSTEM
TOKAI NATIONAL HIGHER EDUCATION & RES SYSTEM
International Classes:
H01S5/042; H01S5/343
Attorney, Agent or Firm:
田中 秀▲てつ▼
Tetsuya Mori
Tetsuya Mori
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