Title:
半導体装置
Document Type and Number:
Japanese Patent JP7390984
Kind Code:
B2
Abstract:
A semiconductor device in which a transistor and a diode are formed on a common semiconductor substrate is provided. The semiconductor substrate includes a transistor region in which a transistor is formed and a diode region in which a diode is formed. At least one first electrode on a second main surface side of the transistor region and at least one second electrode on a second main surface side of the diode region are made of different materials.
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Inventors:
Honda Adult
Takahiro Nakatani
Tetsuya Nitta
Takahiro Nakatani
Tetsuya Nitta
Application Number:
JP2020096675A
Publication Date:
December 04, 2023
Filing Date:
June 03, 2020
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L29/06; H01L29/417; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| JP2013145851A | ||||
| JP2018117054A | ||||
| JP6319057B2 | ||||
| JP2015023118A |
Foreign References:
| WO2010109572A1 |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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