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Title:
COMPONENT FOR PLASMA ETCHING APPARATUS AND METHOD FOR MANUFACTURING OF COMPONENT FOR PLASMA ETCHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2012/073954
Kind Code:
A1
Abstract:
This component for a plasma etching apparatus (1) is provided with a base material (10) and a yttrium oxide coating (20) that is formed using impact sintering and covers the surface of the base material. The yttrium oxide coating (20) contains either or both of a particulate part or a non-particulate part, and the yttrium oxide coating (20) has a film thickness of 10 µm or greater and a film density of 90% or greater. The surface area proportion of the particulate part of the surface of the yttrium oxide coating is 0 - 80% and the surface area proportion of the non-particulate part is 20 - 100%.

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Inventors:
SATO MICHIO
HINO TAKASHI
ROKUTANDA TAKASHI
NAKATANI MASASHI
Application Number:
PCT/JP2011/077533
Publication Date:
June 07, 2012
Filing Date:
November 29, 2011
Export Citation:
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Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
SATO MICHIO
HINO TAKASHI
ROKUTANDA TAKASHI
NAKATANI MASASHI
International Classes:
H01L21/3065; C23C24/04
Foreign References:
JP2009293061A2009-12-17
JP2007326744A2007-12-20
JP2005158933A2005-06-16
JP2008106363A2008-05-08
Attorney, Agent or Firm:
TOKYO INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Tokyo international patent firm (JP)
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Claims:



 
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