Title:
CRUCIBLE FOR CZ
Document Type and Number:
WIPO Patent Application WO/2022/024667
Kind Code:
A1
Abstract:
The present invention is a crucible for CZ, which is intended to be used for growing a single crystal silicon ingot by the CZ method. The crucible for CZ comprises a bottomed cylindrical graphite crucible and a bottomed cylindrical quartz glass crucible arranged in the inside of the graphite crucible, in which a gap is formed between an inner surface of a bottom part of the graphite crucible and an outer surface of a bottom part of the quartz glass crucible on the center axis of the crucible for CZ in such a manner that the inner surface of the bottom part of the graphite crucible and the outer surface of the bottom part of the quartz glass crucible do not come into contact with each other. It is possible to provide a crucible for CZ, in which a bottomed cylindrical quartz glass crucible for growing a single crystal silicon ingot therein by the CZ method can be self-supported stably when the quartz glass crucible is arranged in the inside of a bottomed cylindrical graphite crucible.
Inventors:
TOMOKUNI KAZUKI (JP)
IKEDA YOSHINORI (JP)
IKEDA YOSHINORI (JP)
Application Number:
PCT/JP2021/025117
Publication Date:
February 03, 2022
Filing Date:
July 02, 2021
Export Citation:
Assignee:
SHIN ETSU QUARTZ PROD CO LTD (JP)
International Classes:
C30B29/06; C03B20/00; C30B15/12; F27B14/10
Foreign References:
JP2012017242A | 2012-01-26 | |||
JP2012066969A | 2012-04-05 | |||
JP2011088776A | 2011-05-06 | |||
JP2017095299A | 2017-06-01 | |||
JP2009298652A | 2009-12-24 | |||
JP2011121842A | 2011-06-23 | |||
JP2007269533A | 2007-10-18 | |||
JP2012017245A | 2012-01-26 | |||
JP2013139356A | 2013-07-18 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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