CRYSTAL GROWTH DEVICE AND METHOD

WIPO Patent Application WO/2022/073524

A1

Provided are a crystal growth device and method. The crystal growth device comprises a furnace body, a crucible, a cooling sleeve and a flow guide cylinder, wherein the cooling sleeve is arranged inside the furnace body and cools crystals; the flow guide cylinder is arranged at the periphery of the cooling sleeve and comprises an upper flow guide cylinder part and a lower flow guide cylinder part; the upper flow guide cylinder part is cylindrical and surrounds the cooling sleeve; the lower flow guide cylinder part is arranged at a lower end of the upper guide cylinder part and located on a lower side of the cooling sleeve; the lower flow guide cylinder part is of a hollow big-end-up circular truncated cone structure; a groove is formed on an inner circumferential wall of the circular truncated cone structure; the top of the groove penetrates the circular truncated cone structure; and the cooling sleeve moves in an axial direction of the crucible. The growth device can finely adjust the temperature gradient at a solid-liquid interface, thereby drawing crystals in a defect-free growth area with a certain width.

JP2006287247	HYDROGEN SENSOR
JPH10167875	DEVICE FOR PRODUCING SINGLE CRYSTAL
JPS6041037	[Title of the Invention] A manufacture device of a high dissociation pressure compound single crystal for semiconductors

LIU QI (CN)
HUANG MO (CN)
CHEN YI (CN)
FENG HOUKUN (CN)
FENG CAN (CN)

PCT/CN2021/123121

April 14, 2022

October 11, 2021

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XUZHOU XINJING SEMICONDUCTOR TECH CO LTD (CN)

C30B15/00; C30B15/26

US20170029975A1	2017-02-02
CN105442037A	2016-03-30
JP2007261846A	2007-10-11
JP2000281479A	2000-10-10
CN112281210A	2021-01-29
CN214060710U	2021-08-27

See also references of EP 4227445A4

KANGXIN PARTNERS, P.C. (CN)

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