Title:
DIAMOND SUBSTRATE AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2022/264754
Kind Code:
A1
Abstract:
The present invention is a manufacturing method for a diamond substrate, wherein (111)-oriented diamond crystals are manufactured by epitaxial growth on a base substrate using hydrogen-diluted methane as a main raw material gas, by a microwave plasma CVD method, direct current plasma CVD method, hot filament CVD method, or arc discharge plasma jet CVD method, the manufacturing method being characterized by the growth rate being less than 3.8 µm/h. The diamond crystals and the manufacturing method for the same are thereby stably provided, the diamond crystals being applicable to electronic and magnetic devices, and having a high density NVC and [111]-oriented NV-axis, which is obtained by performing CVD under stipulated conditions on a highly oriented (111) diamond base substrate obtained by performing CVD under the same stipulated conditions.
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Inventors:
NOGUCHI HITOSHI (JP)
MAKINO TOSHIHARU (JP)
OGURA MASAHIKO (JP)
KATO HIROMITSU (JP)
MAKINO TOSHIHARU (JP)
OGURA MASAHIKO (JP)
KATO HIROMITSU (JP)
Application Number:
PCT/JP2022/021218
Publication Date:
December 22, 2022
Filing Date:
May 24, 2022
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
AIST (JP)
AIST (JP)
International Classes:
C30B29/04
Domestic Patent References:
| WO2015107907A1 | 2015-07-23 |
Foreign References:
| JP2007277088A | 2007-10-25 | |||
| JP2007284285A | 2007-11-01 | |||
| JP2021080153A | 2021-05-27 | |||
| JP2006273592A | 2006-10-12 | |||
| US20130143022A1 | 2013-06-06 | |||
| JP2020090408A | 2020-06-11 |
Other References:
M. HATANO ET AL., OYOBUTURI, vol. 85, 2016, pages 311
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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