Title:
DRIVE CIRCUIT FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/229856
Kind Code:
A1
Abstract:
A drive circuit (100) is provided with a signal generation circuit (50), comparator (6a), comparator (6b), and short-circuit determining unit (8). The signal generation circuit (50) generates, as an output signal, a differential amplification signal (Sa) of a voltage detection signal (Vg) that indicates a gate voltage of a semiconductor element (1), and a delay signal (Sd1) of the voltage detection signal (Vg). The comparator (6a) compares with each other a first reference voltage value (Vref1) and the value of the differential amplification signal (Sa). The comparator (6b) compares with each other a second reference voltage value (Vref2) and a voltage value (E) that indicates a gate current. On the basis of the comparison results obtained from the comparators (6a, 6b), the short-circuit determining unit (8) determines whether the semiconductor element (1) is in a short-circuit state or not, and generates a determination signal (Sj) that indicates the determination result.
Inventors:
MASUHARA TAKASHI (JP)
HORIGUCHI TAKESHI (JP)
HORIGUCHI TAKESHI (JP)
Application Number:
PCT/JP2017/021762
Publication Date:
December 20, 2018
Filing Date:
June 13, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M1/08; H02M1/00; H03K17/08; H03K17/687
Domestic Patent References:
| WO2014128951A1 | 2014-08-28 | |||
| WO2016203937A1 | 2016-12-22 |
Foreign References:
| JPH11214972A | 1999-08-06 | |||
| JP2003143833A | 2003-05-16 | |||
| JPH06120787A | 1994-04-28 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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