ESD PROTECTION DEVICE AND METHOD MAKING THE SAME

Title:

ESD PROTECTION DEVICE AND METHOD MAKING THE SAME

Document Type and Number:

WIPO Patent Application WO2004090940

Kind Code:

A3

Abstract:

An ESD protection device (20) comprises an N-type epitaxial collector (21), a first, lightly doped, deep base region (221) and second, highly doped, shallow base region (222) that extends a predetermined lateral dimension. The device responds to an ESD event by effecting vertical breakdown between the base regions and the N-type epitaxial collector. The ESD response is controlled by the predetermined lateral dimension, S, which, in one embodiment, may be is determined by a single masking step. Consequently, operation of the ESD protection device is rendered relatively insensitive to the tolerances of a fabrication process, and to variations between processes.

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Inventors:

WHITFIELD JAMES D (US)

Application Number:

PCT/US2004/009815

Publication Date:

November 03, 2005

Filing Date:

March 31, 2004

Export Citation:

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Assignee:

FREESCALE SEMICONDUCTOR INC (US)
WHITFIELD JAMES D (US)

International Classes:

H01L21/265; H01L21/331; H01L21/8238; H01L23/62; H01L27/02; H01L27/04; H01L29/732; H01L29/74; H01L31/111; H01L; (IPC1-7): H01L21/265; H01L21/331; H01L21/8238; H01L23/63; H01L29/74; H01L31/111

Foreign References:

US6218226B1	2001-04-17
US6130117A	2000-10-10
US5959332A	1999-09-28
US6586818B1	2003-07-01

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