Title:
FILM FORMATION METHOD, FILM FORMATION APPARATUS, AND METHOD FOR CLEANING TREATMENT VESSEL
Document Type and Number:
WIPO Patent Application WO/2020/235596
Kind Code:
A1
Abstract:
The purpose of the present invention is to clean a treatment vessel at a lower temperature when a ruthenium-containing film or an osmium-containing film is formed. This film formation method includes: a step (step 1) for accommodating a substrate to be treated in a treatment vessel and forming a ruthenium-containing film or an osmium-containing film on the substrate to be treated in the treatment vessel by means of CVD; and, after carrying out the film formation step one or more times, a step (step 2) for supplying a halogen-containing gas and an oxidizing gas into the treatment vessel in a state whereby the substrate to be treated is not present in the treatment vessel and dry cleaning the inside of the treatment vessel.
Inventors:
MURAKAMI SEISHI (JP)
IZUMI KOICHI (JP)
SHOJO TADASHI (JP)
MANABE TOSHIKI (JP)
IZUMI KOICHI (JP)
SHOJO TADASHI (JP)
MANABE TOSHIKI (JP)
Application Number:
PCT/JP2020/019952
Publication Date:
November 26, 2020
Filing Date:
May 20, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
IWATANI CORP (JP)
IWATANI CORP (JP)
International Classes:
C23C16/18; C23C16/44; H01L21/31
Domestic Patent References:
| WO2016140166A1 | 2016-09-09 |
Foreign References:
| JP2003027240A | 2003-01-29 | |||
| KR20090104258A | 2009-10-06 | |||
| JP2015037134A | 2015-02-23 | |||
| JPH08153707A | 1996-06-11 |
Attorney, Agent or Firm:
KITANO, Shuhei et al. (JP)
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