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Title:
PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT AND METHOD FOR PRODUCING PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/146974
Kind Code:
A1
Abstract:
Provided is a piezoelectric/electrostrictive film type element in which the film thickness of the piezoelectric/electrostrictive film is thin, the piezoelectric/electrostrictive film is dense, and the piezoelectric/electrostrictive film has good durability and insulation properties. The piezoelectric/electrostrictive film type element comprises a substrate, a lower electrode film, the piezoelectric/electrostrictive film, and an upper electrode film. The substrate and the lower electrode film are fixed. The film thickness of the piezoelectric/electrostrictive film is no more than 5 µm. The piezoelectric/electrostrictive film comprises a piezoelectric/electrostrictive ceramic. The piezoelectric/electrostrictive ceramic includes lead zirconate titanate and a bismuth compound. The bismuth/lead ratio in the peripheral section inside the crystal grains and relatively close to the crystal grain boundary is greater than the bismuth/lead ratio in the center section of the crystal grains which is relatively far from the crystal grain boundary.

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Inventors:
KOIZUMI TAKAAKI (JP)
HIBINO TOMOHIKO (JP)
EBIGASE TAKASHI (JP)
Application Number:
PCT/JP2013/059176
Publication Date:
October 03, 2013
Filing Date:
March 28, 2013
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H01L41/187; B41J2/045; B41J2/055; B41J2/16; C04B35/491; H01L41/09; H01L41/29; H01L41/314; H01L41/43
Foreign References:
JP2011251861A2011-12-15
JP2004168637A2004-06-17
JP2006199580A2006-08-03
JP2006298747A2006-11-02
JPH11348277A1999-12-21
JP2009221096A2009-10-01
JPH11170547A1999-06-29
JP2011029537A2011-02-10
Other References:
See also references of EP 2833425A4
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
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