Title:
GAAS-BASED MULTIFUNCTIONAL TERAHERTZ DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/055426
Kind Code:
A1
Abstract:
The present invention relates to the technical field of terahertz devices. Disclosed is a GaAs-based multifunctional terahertz device, comprising a GaAs thin film. A metal circular ring is fixedly connected to the top of the GaAs thin film, the middle of the metal circular ring is provided with a metal cuboid member, and the metal cuboid member is fixedly connected to the top of the GaAs thin film. According to the present invention, a device having EIT-like, Fano and wave absorber functions is obtained by means of the dynamically tunable material, i.e., GaAs; the device consists of the metal circular ring and the metal cuboid member; the GaAs thin film is arranged below the structure; the GaAs conductivity is adjusted by means of optical pumping; when the GaAs conductivity is 10 S/m, a Fano resonance is formed by means of TE polarized wave excitation, and an EIT-like resonance is formed by means of TM polarized wave excitation; resonance modulation is realized by adjusting the GaAs conductivity, and the maximum modulation depth reaches 2745%. When the GaAs conductivity is 2×105 S/m, a double-narrow-band absorber is formed by means of TM polarized wave excitation, the maximum sensitivity is calculated to reach 513 GHz/RIU, and the maximum FOM value reaches 39.5, so that the device has excellent performance in the aspect of refractive index sensing.
Inventors:
YAN XIN (CN)
Application Number:
PCT/CN2022/133874
Publication Date:
March 21, 2024
Filing Date:
November 24, 2022
Export Citation:
Assignee:
UNIV ZAOZHUANG (CN)
International Classes:
H01S1/02
Foreign References:
| CN105676482A | 2016-06-15 | |||
| CN103259097A | 2013-08-21 | |||
| CN104678598A | 2015-06-03 | |||
| US20130170018A1 | 2013-07-04 |
Attorney, Agent or Firm:
MUDA INTELLECTUAL PROPERTY FIRM (CN)
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