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Title:
HIGH PURITY COPPER SPUTTERING TARGET MATERIAL
Document Type and Number:
WIPO Patent Application WO/2017/033694
Kind Code:
A1
Abstract:
Provided is a high purity copper sputtering target material characterized in that Cu purity excluding O, H, N and C is at least 99.99998 mass%, Al content is 0.005 mass ppm or less, Si content is 0.05 mass ppm or less, Fe content is 0.02 mass ppm or less, S content is 0.03 mass ppm or less, Cl content is 0.1 mass ppm or less, O content is 1 mass ppm or less, H content is 1 mass ppm or less, N content is 1 mass ppm or less, and C content is 1 mass ppm or less.

Inventors:
MORI SATORU (JP)
TANI U (JP)
SATO YUUJI (JP)
KIKUCHI FUMITAKE (JP)
ARAI ISAO (JP)
Application Number:
PCT/JP2016/072819
Publication Date:
March 02, 2017
Filing Date:
August 03, 2016
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C9/01; C22C9/10; C22F1/08; C22B15/14; C22C9/06; C22C9/08; C22F1/00; C25C1/12; C25C7/02
Domestic Patent References:
WO2005073434A12005-08-11
WO2015005348A12015-01-15
WO2006134724A12006-12-21
WO2010038641A12010-04-08
WO2010038642A12010-04-08
Foreign References:
JPH1060632A1998-03-03
JP2011162835A2011-08-25
JPH02185990A1990-07-20
JP3102177B22000-10-23
Other References:
See also references of EP 3342898A4
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
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