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Title:
HOT ELECTRON TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2007/058144
Kind Code:
A1
Abstract:
It is possible reduce a charging time by increasing the maximum current density of emitter current and obtain a higher-speed operation of a hot electron transistor. The hot electron transistor comprises: an emitter electrode and an emitter layer; a collector electrode and a collector layer; an active layer formed of an intrinsic semiconductor in the traveling path of conduction electrons between the emitter layer and the collector layer; and a gate electrode installed on the active layer. The emitter layer is formed of a material having higher conduction band bottom energy than a material forming the active layer.

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Inventors:
MIYAMOTO YASUYUKI (JP)
FURUYA KAZUHITO (JP)
ASADA MASAHIRO (JP)
MACHIDA NOBUYA (JP)
Application Number:
PCT/JP2006/322562
Publication Date:
May 24, 2007
Filing Date:
November 13, 2006
Export Citation:
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Assignee:
TOKYO INST TECH (JP)
MIYAMOTO YASUYUKI (JP)
FURUYA KAZUHITO (JP)
ASADA MASAHIRO (JP)
MACHIDA NOBUYA (JP)
International Classes:
H01L29/68; H01L21/331; H01L29/737
Foreign References:
JPH01244662A1989-09-29
JPS6236862A1987-02-17
JPH02266529A1990-10-31
Attorney, Agent or Firm:
FURUYA, Fumio et al. (19-5 Nishishinjuku 1-chome, Shinjuku-k, Tokyo 23, JP)
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