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Title:
IMAGE SENSOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/042290
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are an image sensor, a manufacturing method therefor, and an electronic device, related to the technical field of semiconductors, capable of increasing the quantum efficiency of photoelectric conversion of a long wavelength light, thus improving the imaging effects of the image sensor. The image sensor comprises: a semiconductor chip; a photosensitive component provided in the semiconductor chip, the photosensitive component being used for photoelectric conversion; in the direction perpendicular to the plane on which the semiconductor chip is located, the photosensitive component being provided with a light incident surface and a bottom surface opposite each other; an optically rarer medium layer provided on one side of the bottom surface of the photosensitive component and adjacent to the photosensitive component, the optically rarer medium layer and the bottom surface of the photosensitive component being in contact with each other to form an interfacing surface, the interfacing surface comprising at least one slanted plane, an acute angle being provided between the slanted plane and the plane on which the semiconductor chip is located, and the refractive index of the optically rarer medium layer being less than the refractive index of the photosensitive component. The present solution is primarily used in imaging.

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Inventors:
YAO GUOFENG (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2019/104386
Publication Date:
March 11, 2021
Filing Date:
September 04, 2019
Export Citation:
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Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L27/146
Foreign References:
CN109786402A2019-05-21
CN108987419A2018-12-11
US20110316002A12011-12-29
CN102693996A2012-09-26
KR20080100025A2008-11-14
Attorney, Agent or Firm:
UNI-INTEL PATENT AND TRADEMARK LAW FIRM (CN)
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