Title:
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/037259
Kind Code:
A1
Abstract:
A laterally diffused metal oxide semiconductor device and a preparation method therefor. The laterally diffused metal oxide semiconductor device (1) comprises: a substrate (10), which is provided with a trench (16); a drift region (30), which is located in the substrate (10), wherein the trench (16) is arranged around the drift region (30); a dielectric layer (20), which is located on the substrate (10) and is arranged around the drift region (30), wherein the dielectric layer (20) covers at least part of a first side wall (16a) and part of a bottom wall (16b) connected to the first side wall (16a); and a gate (40), which is arranged around the drift region (30). The gate (40) covers part of the surface of the dielectric layer (20) and extends towards a bottom wall (16b) of the trench (16) to cover part of the bottom wall (16b) of the trench (16).
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Inventors:
AN LIQI (CN)
SONG LIANG (CN)
WANG QIONG (CN)
WANG YANAN (CN)
SONG LIANG (CN)
WANG QIONG (CN)
WANG YANAN (CN)
Application Number:
PCT/CN2023/106985
Publication Date:
February 22, 2024
Filing Date:
July 12, 2023
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/41; H01L21/336; H01L29/06; H01L29/78
Foreign References:
| US20200119189A1 | 2020-04-16 | |||
| CN103325672A | 2013-09-25 | |||
| CN109148583A | 2019-01-04 | |||
| CN102386211A | 2012-03-21 | |||
| CN111540785A | 2020-08-14 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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