Title:
LEAD-FREE YTTERBIUM-DOPED DOUBLE PEROVSKITE THIN FILMS
Document Type and Number:
WIPO Patent Application WO/2023/240059
Kind Code:
A3
Abstract:
Described is a thin film comprising a Yb-doped double perovskite, wherein the double perovskite has the formula M2AYbxB(1-x)X6; wherein each occurrence of M independently represents Cs or Rb; A represents Ag or Cu; B represents Bi, In, Sb, or Ga; x has a value between 0.01 and 0.20; and each X independently represents F, Cl, Br, or I. Also described is a method of making the thin films. The thin film may be useful in photovoltaic devices.
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Inventors:
AYDIL ERAY (US)
TRAN MINH (US)
CLEVELAND IVER (US)
TRAN MINH (US)
CLEVELAND IVER (US)
Application Number:
PCT/US2023/067966
Publication Date:
March 28, 2024
Filing Date:
June 06, 2023
Export Citation:
Assignee:
UNIV NEW YORK (US)
International Classes:
H01L31/0216; H01L33/00; H01M8/10; C30B29/00
Attorney, Agent or Firm:
ALLEN, Scott, E. et al. (US)
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