Title:
LIQUID FOR NITRIDING TREATMENT, NITRIDED METAL OXIDE MANUFACTURING METHOD, AND NITRIDED INDIUM OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2020/040149
Kind Code:
A1
Abstract:
In the present invention, an alkali metal amide is dissolved in a cyclic alkylene urea represented by formula (1) (in the formula, R1 and R2 each independently represent an alkyl group having 1-3 carbon atoms, and R3 represents an alkylene group having 1-4 carbon atoms.)
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Inventors:
TADANAGA KIYOHARU (JP)
MIURA AKIRA (JP)
ISAJI TADAYUKI (JP)
MAEDA SHINICHI (JP)
MIURA AKIRA (JP)
ISAJI TADAYUKI (JP)
MAEDA SHINICHI (JP)
Application Number:
PCT/JP2019/032484
Publication Date:
February 27, 2020
Filing Date:
August 20, 2019
Export Citation:
Assignee:
UNIV HOKKAIDO NAT UNIV CORP (JP)
NISSAN CHEMICAL CORP (JP)
NISSAN CHEMICAL CORP (JP)
International Classes:
C01G15/00
Foreign References:
| JP2013256434A | 2013-12-26 | |||
| JP2006111520A | 2006-04-27 | |||
| JP2003012309A | 2003-01-15 | |||
| JP2013256434A | 2013-12-26 | |||
| JP2016063053A | 2016-04-25 |
Other References:
HYOUNG-DO KIM, JONG HEON KIM, KYUNG PARK, YUN CHANG PARK, SUNKOOK KIM, YONG JOO KIM, JOZEPH PARK, HYUN-SUK KIM: "Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor", ACS APPLIED MATER & INTERFACES, vol. 10, no. 18, 18 April 2018 (2018-04-18), pages 15873 - 15879, XP055688709, ISSN: 1944-8244, DOI: 10.1021/acsami.8b02678
S. OKAZAKI, Y. HIROSE, S. NAKAO, Y. CHANG, A. SUZUKI, D. OKA, T. HASEGAWA: "29P-F2-1: Physical properties of indium oxynitride (InOxNy) epitaxial thin films", LECTURE PREPRINTS OF THE 60TH JSAP SPRING MEETING, 2013, vol. 60, 11 March 2013 (2013-03-11), pages 06-187, XP009526625
CHO, SHINHO: "Effects of Rapid Thermal Annealing Temperature on the Properties of Nitrogen-Doped Indium Oxide Thin Films", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 17, no. 6, 1 June 2017 (2017-06-01), pages 4048 - 4051, XP009526626, ISSN: 1533-4880, DOI: 10.1166/jnn.2017.13377
MIURA AKIRA: "Development of methods for synthesizing nitrides and oxynitrides, and academic establishment", LECTURE PROCEEDINGS OF 2017 ANNUAL CONFERENCE OF THE CERAMIC SOCIETY OF JAPAN, 1 March 2017 (2017-03-01), pages 2K08A, XP009526627, ISBN: 978-4-931298-73-6
MIURA AKIRA : "Development of novel nitride synthesis method from NaNIR melt and oxides", LECTURE PREPRINTS OF THE 28TH FALL MEETING OF THE CERAMIC SOCIETY OF JAPAN, vol. 28, 1 September 2015 (2015-09-01), pages 2K24, XP009526630
LEE ZHI YIN; NG SHA SHIONG; YAM FONG KWONG: "Growth mechanism of indium nitride via sol-gel spin coating method and nitridation process", SURFACE AND COATINGS TECHNOLOGY, vol. 310, 20 December 2016 (2016-12-20), pages 38 - 42, XP029881464, ISSN: 0257-8972, DOI: 10.1016/j.surfcoat.2016.12.066
JANSEN, M.LETSCHERT, H.P: "Inorganic yellow-red pigments without toxic metals", NATURE, vol. 404, 2000, pages 980 - 982
HSIEH, J.C.YUN, D.S.HU, E.BELCHER, A.M.: "Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals", J. MATER, vol. 2010, 2010
XIE, Y.QIAN, Y.WANG, W.ZHANG, S.ZHANG, Y.: "A Benzene-Thermal Synthetic Route to Nanocrystalline GaN", SCIENCE, vol. 272, 1996, pages 1926 - 1927
YANG, L.YU, H.XU, L.MA, Q.QIAN, Y: "Sulfur-assisted synthesis of nitride nanocrystals", DALTON TRANSACTIONS, vol. 39, 2010, XP002794332, DOI: 10.1039/B920429F
KANO, J.KOBAYASHI, E.TONGAMP, W.SAITO, F: "Preparation of GaN powder by mechanochemical reaction between Ga203 and Li3N", J. ALLOYS COMPD., vol. 464, 2008, pages 337 - 339
See also references of EP 3842388A4
S. OKAZAKI, Y. HIROSE, S. NAKAO, Y. CHANG, A. SUZUKI, D. OKA, T. HASEGAWA: "29P-F2-1: Physical properties of indium oxynitride (InOxNy) epitaxial thin films", LECTURE PREPRINTS OF THE 60TH JSAP SPRING MEETING, 2013, vol. 60, 11 March 2013 (2013-03-11), pages 06-187, XP009526625
CHO, SHINHO: "Effects of Rapid Thermal Annealing Temperature on the Properties of Nitrogen-Doped Indium Oxide Thin Films", JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 17, no. 6, 1 June 2017 (2017-06-01), pages 4048 - 4051, XP009526626, ISSN: 1533-4880, DOI: 10.1166/jnn.2017.13377
MIURA AKIRA: "Development of methods for synthesizing nitrides and oxynitrides, and academic establishment", LECTURE PROCEEDINGS OF 2017 ANNUAL CONFERENCE OF THE CERAMIC SOCIETY OF JAPAN, 1 March 2017 (2017-03-01), pages 2K08A, XP009526627, ISBN: 978-4-931298-73-6
MIURA AKIRA : "Development of novel nitride synthesis method from NaNIR melt and oxides", LECTURE PREPRINTS OF THE 28TH FALL MEETING OF THE CERAMIC SOCIETY OF JAPAN, vol. 28, 1 September 2015 (2015-09-01), pages 2K24, XP009526630
LEE ZHI YIN; NG SHA SHIONG; YAM FONG KWONG: "Growth mechanism of indium nitride via sol-gel spin coating method and nitridation process", SURFACE AND COATINGS TECHNOLOGY, vol. 310, 20 December 2016 (2016-12-20), pages 38 - 42, XP029881464, ISSN: 0257-8972, DOI: 10.1016/j.surfcoat.2016.12.066
JANSEN, M.LETSCHERT, H.P: "Inorganic yellow-red pigments without toxic metals", NATURE, vol. 404, 2000, pages 980 - 982
HSIEH, J.C.YUN, D.S.HU, E.BELCHER, A.M.: "Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals", J. MATER, vol. 2010, 2010
XIE, Y.QIAN, Y.WANG, W.ZHANG, S.ZHANG, Y.: "A Benzene-Thermal Synthetic Route to Nanocrystalline GaN", SCIENCE, vol. 272, 1996, pages 1926 - 1927
YANG, L.YU, H.XU, L.MA, Q.QIAN, Y: "Sulfur-assisted synthesis of nitride nanocrystals", DALTON TRANSACTIONS, vol. 39, 2010, XP002794332, DOI: 10.1039/B920429F
KANO, J.KOBAYASHI, E.TONGAMP, W.SAITO, F: "Preparation of GaN powder by mechanochemical reaction between Ga203 and Li3N", J. ALLOYS COMPD., vol. 464, 2008, pages 337 - 339
See also references of EP 3842388A4
Attorney, Agent or Firm:
KURIHARA, Hiroyuki et al. (JP)
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