LOCAL DRY ETCHING DEVICE AND LOCAL DRY ETCHING PROCESSING METHOD

WIPO Patent Application WO/2015/033999

A1

The present invention addresses the following problems: reducing the frequency of tuning in a local dry etching device, or making it possible to perform processing for a long period of time at the same tuning; reducing to the extent possible the frequency of evacuating for the purpose of changing discharge tubes and improving the overall processing efficiency in local dry etching processing; and hindering the progress of deterioration of the discharge tubes and thereby suppressing as much as possible fluctuations in processing conditions caused by such deterioration and performing highly accurate processing while maintaining a stable processing rate. A local dry etching device (1) is provided with a vacuum chamber (2), a single work table (7), a plurality of discharge tubes (31-34), a material gas supply device (9) for supplying material gas to one discharging tube that has been selected, a single electromagnetic wave oscillator (6) for which output is adjustable, and waveguide tubes (41-45) to which an electromagnetic wave change apparatus (5) is provided. The electromagnetic wave change apparatus (5) sequentially switches between the discharge tubes to select one by which to emit electromagnetic waves.

JPH088235	[Title of Invention] Plasma Reactor
JP2023064727	BEVEL ETCHER USING ATMOSPHERIC PLASMA
JPS6474727	DRY ETCHING METHOD

OBARA YASUSHI (JP)

PCT/JP2014/073323

March 12, 2015

September 04, 2014

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SPEEDFAM CO LTD (JP)

H01L21/3065; H05H1/46

JP2004124240A	2004-04-22
JP2007267083A	2007-10-11
JP2005129323A	2005-05-19

AMANO Masakage (JP)
Amano right -- view (JP)

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