Title:
MEMORY CELL CAPACITOR PLATE
Document Type and Number:
WIPO Patent Application WO2000059011
Kind Code:
A3
Abstract:
An improved method of forming a memory cell capacitor plate is disclosed. The method of forming a memory cell capacitor plate comprises the steps of depositing a sacrificial layer and forming an opening in the sacrificial layer. Then an electrode material layer which includes a substantially conductive material that remains substantially conductive upon exposure to oxygen is deposited over a top surface of the sacrificial layer and at least partially filling the opening. The method continues with removing a portion of the electrode material layer down to at least about a level of the sacrificial layer's top surface to define a top surface of the memory cell capacitor plate, followed by removal of the sacrificial layer.
Inventors:
KEIL DOUGLAS L
Application Number:
PCT/US2000/008638
Publication Date:
February 22, 2001
Filing Date:
March 30, 2000
Export Citation:
Assignee:
LAM RES CORP (US)
International Classes:
H01L21/3205; H01L21/02; H01L21/768; H01L21/8242; H01L27/108; (IPC1-7): H01L21/02; H01L21/8242
Foreign References:
| US5808854A | 1998-09-15 | |||
| US5392189A | 1995-02-21 | |||
| US5366920A | 1994-11-22 | |||
| US5789320A | 1998-08-04 | |||
| EP0834912A2 | 1998-04-08 | |||
| US5283201A | 1994-02-01 | |||
| US5801916A | 1998-09-01 |
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