Title:
MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF OPERATING
Document Type and Number:
WIPO Patent Application WO/2023/197774
Kind Code:
A1
Abstract:
A memory device includes a memory array including memory blocks, and a control circuit coupled to the memory array. The control circuit is configured to when multi-pass program operations are performed, during a non-last pass program of the memory cells in a first memory sub-block of a first memory block, determine verify loop counts of verify operations after programming the memory cells in the first memory sub-block of the first memory block to one or more first target program states; and when programming the memory cells in a second memory sub-block of the first memory block to the one or more first target program states using the same program and verify conditions as for the first memory sub-block of the first memory block, during the non-last pass program, not perform at least the verify operation corresponding to the last of the verify loop counts.
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Inventors:
DONG ZHIPENG (CN)
LIANG KE (CN)
LIANG KE (CN)
Application Number:
PCT/CN2023/079760
Publication Date:
October 19, 2023
Filing Date:
March 06, 2023
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/04; G11C16/10; G11C16/34
Foreign References:
| CN114882928A | 2022-08-09 | |||
| CN115527588A | 2022-12-27 | |||
| US20200211663A1 | 2020-07-02 | |||
| US10714198B1 | 2020-07-14 | |||
| US11049578B1 | 2021-06-29 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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