A METHOD FOR ERROR REDUCTION IN LITHOGRAPHY

WIPO Patent Application WO2000072090

A3

The present invention relates to a method and a system for predicting and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semi-conductor wafer. The method according to the invention comprises the steps of collecting information about a mask substrate, a mask writer, an exposure station, and/or about behaviour of a processing step that will occur after the writing of the mask. Further the method comprises predicting from the combined information distorsions occuring in the pattern, when it is subsequently printed on the workpiece; calculating from said prediction a correction to diminish said predicted distorsion, and exposing said pattern onto said mask substrate while applying said correction for said distorsions.

JP2003173956	METHOD AND DEVICE FOR EXPOSURE
JPH10242040	PROJECTION ALIGNER
JP7284635	RESIN, RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN

SANDSTROEM TORBJOERN (SE)
EKBERG PETER (SE)
ASKEBJER PER (SE)
EKBERG MATS (SE)
THUREN ANDERS (SE)

PCT/SE2000/001030

February 01, 2001

May 22, 2000

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MICRONIC LASER SYSTEMS AB (SE)
SANDSTROEM TORBJOERN (SE)
EKBERG PETER (SE)
ASKEBJER PER (SE)
EKBERG MATS (SE)
THUREN ANDERS (SE)

G03F7/20; H01L21/027; G03F1/00; (IPC1-7): G03F7/20; H01J9/20

WO1997005526A1

1997-02-13

US5815685A	1998-09-29
EP0307726A2	1989-03-22
US5593800A	1997-01-14
US5691115A	1997-11-25
US5879844A	1999-03-09

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