Title:
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/026940
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a method for forming a semiconductor structure. The method comprises: providing a substrate, wherein the substrate comprises a first region and a second region located outside the first region, the first region comprises a laminated structure and an isolation trench which are alternately arranged in a first direction, and the first direction is any direction in a plane where the substrate is located; performing ion implantation on the side wall of the laminated structure in the first direction to form an active virtual connection layer extending in the first direction and partially located in the isolation trench; and forming a gate structure on the surface of the active virtual connection layer.
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Inventors:
LIN CHAO (CN)
Application Number:
PCT/CN2022/113254
Publication Date:
February 08, 2024
Filing Date:
August 18, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/265; H01L21/28
Foreign References:
| CN114121819A | 2022-03-01 | |||
| CN114121820A | 2022-03-01 | |||
| CN113437079A | 2021-09-24 | |||
| CN113497036A | 2021-10-12 | |||
| CN104054181A | 2014-09-17 | |||
| US20210408047A1 | 2021-12-30 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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