Title:
METHOD FOR MAKING A SEMICONDUCTOR PHOTODETECTOR, IN PARTICULAR IN THE LOW-ENERGY UV-X DOMAIN, AND PHOTODETECTOR OBTAINED BY SAID METHOD
Document Type and Number:
WIPO Patent Application WO2003041120
Kind Code:
A3
Abstract:
The invention concerns a method for making a semiconductor photodetector, in particular in the low-energy UV-X domain, and a photodetector obtained by said method. The invention is characterized in that it consists in making a photodetecting element (22) in photodetecting semiconductor material, said element being provided with electrodes (24, 26). After making the photodetecting element and without impairing the electrodes, it consists in removing a surface layer of the photodetecting semiconductor material to produce a new surface layer having the electrical properties of said material volume.
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Inventors:
GUIZARD BENOIT (FR)
FOULON FRANCOIS (FR)
FOULON FRANCOIS (FR)
Application Number:
PCT/FR2002/003766
Publication Date:
November 27, 2003
Filing Date:
November 04, 2002
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
GUIZARD BENOIT (FR)
FOULON FRANCOIS (FR)
GUIZARD BENOIT (FR)
FOULON FRANCOIS (FR)
International Classes:
H01L21/00; H01L31/08; H01L31/101; H01L31/115; H01L31/18; H01L; (IPC1-7): H01L31/101; H01L31/08; H01L31/18
Foreign References:
| US4581099A | 1986-04-08 | |||
| US5404007A | 1995-04-04 | |||
| US5780916A | 1998-07-14 |
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