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Title:
METHOD FOR MANUFACTURING GROUP III COMPOUND SUBSTRATE, AND GROUP III COMPOUND SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/241184
Kind Code:
A1
Abstract:
A method for manufacturing a group III compound substrate according to the present invention is a method for manufacturing a group III compound substrate by growing a group III compound crystal (1) on a fixed seed crystal (3) placed on a susceptor (2) through vapor-phase growth, the method being characterized in that a peelable material having cleavability is used for at least one member among the susceptor (2) and the seed crystal (3). A group III compound substrate is characterized by being obtained by the method for manufacturing a group III compound substrate according to the present invention. The present invention can provide a method for manufacturing a group III compound substrate and a substrate manufactured by the method, in which a large-sized GaN crystal substrate having higher quality is obtained at low cost while making use of advantages of a high film forming speed that is an advantage of the vapor growth method.

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Inventors:
KUBOTA YOSHIHIRO (JP)
NAGATA KAZUTOSHI (JP)
Application Number:
PCT/JP2020/018471
Publication Date:
December 03, 2020
Filing Date:
May 01, 2020
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C30B29/38; C23C16/458; C30B25/12; C30B25/18; H01L21/205
Domestic Patent References:
WO2017154701A12017-09-14
Foreign References:
JP2015178448A2015-10-08
JP2009519202A2009-05-14
JPS623460B21987-01-24
JPH0479992B21992-12-17
Other References:
PHYS. STATUS SOLIDI B, vol. 254, no. 8, 2017, pages 1600671
PHYS. STATUS SOLIDI A, vol. 214, no. 9, 2017, pages 1600754
See also references of EP 3978659A4
Attorney, Agent or Firm:
TAGUCHI, Masahiro et al. (JP)
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