Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/023409
Kind Code:
A1
Abstract:
[PROBLEMS] To provide a method for manufacturing a semiconductor device which
can prevent the deterioration of a capacitor dielectric film. [MEANS FOR SOLVING
PROBLEMS] A method for manufacturing a semiconductor device comprising the
steps of forming a base insulating film (11) above a silicon substrate (1), forming
a capacitor (Q) provided with a lower electrode (23a), a capacitor dielectric
film (24a) formed of a ferroelectric material, and an upper electrode (25a) on
the base insulating film (11), forming a first capacitor protection insulating
film (39) covering the capacitor (Q), forming an interlayer insulating film
(40) on the first capacitor protection insulating film (39) by a plasma CVD method
in which bias voltage is applied to the side of the silicon substrate (1), and annealing
the interlayer insulating film (40) in an ozone- or oxygen-containing atmosphere.
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Inventors:
MATSUURA KATSUYOSHI (JP)
Application Number:
PCT/JP2006/316423
Publication Date:
February 28, 2008
Filing Date:
August 22, 2006
Export Citation:
Assignee:
FUJITSU LTD (JP)
MATSUURA KATSUYOSHI (JP)
MATSUURA KATSUYOSHI (JP)
International Classes:
H01L27/105; H01L21/8246
Foreign References:
| JP2003273332A | 2003-09-26 | |||
| JPH0613565A | 1994-01-21 | |||
| JP2006049795A | 2006-02-16 | |||
| JP2004193280A | 2004-07-08 |
Attorney, Agent or Firm:
OKAMOTO, Keizo (Bldg. 4F., 11-7,Nihonbashi Ningyo-cho 3-chome,Chuo-k, Tokyo 13, JP)
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