Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/189835
Kind Code:
A1
Abstract:
The present invention is characterized by comprising: a step for forming, on a wafer, a plurality of semiconductor elements having an active region; a step for forming a plurality of cleavage grooves on the upper-surface side of the wafer; and a step for cleaving the wafer from the upper-surface side of the wafer and exposing a plurality of the active regions and steps formed by the plurality of cleavage grooves in a cross-section, the active regions being provided in semicircles in which the radius is the distance from the bottom of the cleavage grooves to the lower surface of the wafer and the center is on the lower surface of the wafer immediately below the cleaving-propagation-direction-side end part of the cleavage grooves.
Inventors:
YOSHINO TATSURO (JP)
SUZUKI MASATO (JP)
NEGISHI MASATO (JP)
YOSHIKAWA KENJI (JP)
SUZUKI MASATO (JP)
NEGISHI MASATO (JP)
YOSHIKAWA KENJI (JP)
Application Number:
PCT/JP2017/014998
Publication Date:
October 18, 2018
Filing Date:
April 12, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/02
Domestic Patent References:
| WO2017006902A1 | 2017-01-12 | |||
| WO2006041134A1 | 2006-04-20 | |||
| WO2007074688A1 | 2007-07-05 |
Foreign References:
| JP2009111268A | 2009-05-21 | |||
| JPH0786687A | 1995-03-31 | |||
| JP2012156228A | 2012-08-16 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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