METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

WIPO Patent Application WO/2004/068569

A1

A method for manufacturing a semiconductor wafer is disclosed which comprises at least a final polishing step wherein final polishing is conducted by turning a polishing cloth attached onto a polishing plate while supplying an abrasive to the polishing cloth and bringing a semiconductor wafer into sliding contact with the polishing cloth and a cleaning step wherein the polished semiconductor wafer is put into a cleaning bath and cleaned. In this method, the semiconductor wafer is put into the cleaning bath within 40 seconds after the final polishing is finished, or the polished semiconductor wafer is showered with water spray or showered at a low pressure and then put into the cleaning bath with its surface covered with the abrasive. With this method, adhesion of particles to the surface of a semiconductor wafer such as a silicon wafer can be reduced and local etching of a wafer can be prevented.

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NAKAJIMA YUKIO (JP)
KIDA TAKAHIRO (JP)
OKADA MAMORU (JP)

PCT/JP2004/000679

August 12, 2004

January 27, 2004

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SHINETSU HANDOTAI KK (JP)
NAKAJIMA YUKIO (JP)
KIDA TAKAHIRO (JP)
OKADA MAMORU (JP)

B08B3/04; H01L21/304; H01L21/306; (IPC1-7): H01L21/304

JPH1074716A	1998-03-17
JPH07201786A	1995-08-04
JPH1098017A	1998-04-14
JPH07263387A	1995-10-13

Yoshimiya, Mikio (6-4 Motoasakusa 2-chom, Taito-ku Tokyo 41, JP)

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