Title:
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/104849
Kind Code:
A1
Abstract:
A method for manufacturing a thin film transistor, in which a method for forming a back channel comprises the steps of: S21, manufacturing, on a gate insulating layer, an active material film layer, a source/drain material film layer, and a photoresist material film layer in a stacked manner to obtain an etching substrate; S22, performing, on the etching substrate, primary wet etching, primary dry etching, photoresist burning, and secondary wet etching in turn to form a source/drain, and a photoresist layer; S23, etching the active material film layer by using a first etching gas to form a back channel; and S24, removing the photoresist layer by using a second etching gas to obtain a thin film transistor. According to the manufacturing method, use of a copper stripping liquid can be avoided during back channel etching, and components and amounts of various etching gases are rationally matched. While completing back channel etching and photoresist removing, problems of diffusion of copper ions and contamination of other impurity ions in the copper stripping liquid in the prior art are also avoided. Further provided is use of the manufacturing method in an array substrate.
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Inventors:
SUN TAO (CN)
Application Number:
PCT/CN2018/073163
Publication Date:
June 06, 2019
Filing Date:
January 18, 2018
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L21/77; H01L21/306
Foreign References:
| CN107481934A | 2017-12-15 | |||
| CN107369715A | 2017-11-21 | |||
| CN106409682A | 2017-02-15 | |||
| CN103295970A | 2013-09-11 | |||
| US20130017648A1 | 2013-01-17 |
Attorney, Agent or Firm:
MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)
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