Title:
METHOD FOR MEASURING CONTACT RESISTANCE OF TRANSISTOR TEST DEVICE, AND COMPUTER-READABLE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2022/077980
Kind Code:
A1
Abstract:
A method for measuring contact resistance of a transistor test device, and a computer-readable medium. The measuring method comprises: (S100) providing a plurality of transistor test devices, each of which comprises a source, a drain, an active layer (330), a gate (60) located on the active layer (330), and wires (70) connected to the source and the drain, wherein the width of the gate (60), the length of the channel region of the active layer (330), and the number of the connected wires (70) of each transistor test device is the same, and the width of the active layer (330) of each transistor test device is different; (S200) measuring the plurality of transistor test devices to obtain the total resistance of the transistor test devices; and (S300) determining the contact resistance of the transistor test device according to the width of the active layer (330) of a device having a resistance matching the total resistance of the plurality of devices.
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Inventors:
LIN SHIH-CHIEH (CN)
Application Number:
PCT/CN2021/106550
Publication Date:
April 21, 2022
Filing Date:
July 15, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G01R27/02
Foreign References:
| CN109637944A | 2019-04-16 | |||
| CN103575998A | 2014-02-12 | |||
| CN104156526A | 2014-11-19 | |||
| CN105223420A | 2016-01-06 | |||
| CN104808126A | 2015-07-29 | |||
| JPH06195426A | 1994-07-15 | |||
| US20040227191A1 | 2004-11-18 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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