Title:
METHOD FOR PREPARING EMBEDDED WORD LINE STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/228269
Kind Code:
A1
Abstract:
An embedded word line structure and a preparation method therefor. The preparation method comprises: forming a first groove on a semiconductor substrate, wherein the bottom of the first groove is provided with a tip; performing epitaxial growth in the first groove, so as to reduce the depth of the tip at the bottom of the first groove; and forming a gate dielectric layer on an inner wall of the first groove, and filling the first groove with a gate conductive layer, so as to form an embedded word line structure.
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Inventors:
LU YONG (CN)
SHEN HONGKUN (CN)
SHEN HONGKUN (CN)
Application Number:
PCT/CN2021/096669
Publication Date:
November 18, 2021
Filing Date:
May 28, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN109216433A | 2019-01-15 | |||
| CN110610940A | 2019-12-24 | |||
| US20110049595A1 | 2011-03-03 | |||
| US20120080746A1 | 2012-04-05 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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