Title:
半導体装置
Document Type and Number:
Japanese Patent JP4580800
Kind Code:
B2
Abstract:
A semiconductor device includes: a first sense amplifier; a first bit line coupled to the first sense amplifier; a second bit line disposed next to the first bit line and electrically coupled to a constant-voltage source; and a first reference cell, including: a first transistor having a source and a drain, one of which is coupled to the first bit line; a second transistor, having a source and a drain, one of which is coupled to the second bit line, and the other coupled to the other of the source and drain of the first transistor, which is not coupled to the bit line BL 1 a; and a capacitance C 1 having electrodes, one of which is coupled to the other of the source and the drain of the first transistor, and the other of the source and the drain of Tr 2.
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Inventors:
Masayuki Hamada
Application Number:
JP2005096318A
Publication Date:
November 17, 2010
Filing Date:
March 29, 2005
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/8242; G11C11/4091; G11C11/4099; H01L27/108
Domestic Patent References:
| JP4362595A | ||||
| JP2004265533A | ||||
| JP2000260885A |
Attorney, Agent or Firm:
Shinji Hayami