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Title:
METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2017/134990
Kind Code:
A1
Abstract:
This method for producing an organic semiconductor film involves a production step for forming an organic semiconductor film in a first direction by supplying an organic semiconductor solution between a surface of a substrate and a blade surface of a coating blade positioned so as to face the substrate surface at a distance therefrom, while causing the blade surface to contact the organic semiconductor solution and moving the blade surface in the first direction, which is parallel to the substrate surface. The coating blade is positioned in a manner such that a first gap and a second gap exist in the region where the blade surface and the organic semiconductor solution contact one another, the gaps are of different sizes relative to the substrate surface, and the first gap is located on the upstream side in the first direction, and the second gap, which is smaller than the first gap, is located on the downstream side. The size of the second gap is the minimum distance between the substrate surface and the blade surface, and is no greater than 40μm.

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Inventors:
NAKAMURA SEIGO (JP)
MAEHARA YOSHIKI (JP)
ITAI YUICHIRO (JP)
USAMI YOSHIHISA (JP)
TAKEYA JUNICHI (JP)
Application Number:
PCT/JP2017/000589
Publication Date:
August 10, 2017
Filing Date:
January 11, 2017
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
UNIV TOKYO (JP)
International Classes:
H01L21/368; H01L21/336; H01L29/786; H01L51/05; H01L51/40
Domestic Patent References:
WO2011040155A12011-04-07
WO2014175351A12014-10-30
WO2011040155A12011-04-07
Foreign References:
JP2013077799A2013-04-25
JPH0992617A1997-04-04
JP2013077799A2013-04-25
Other References:
"Tuning charge transport in solution-sheared organic semiconductors using lattice strain", NATURE, vol. 480, 2011, pages 504
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
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