METHOD FOR PRODUCING SILICON TARGET STRUCTURE AND SILICON TARGET STRUCTURE

Title:

METHOD FOR PRODUCING SILICON TARGET STRUCTURE AND SILICON TARGET STRUCTURE

Document Type and Number:

WIPO Patent Application WO/2015/008864

Kind Code:

A1

Abstract:

In this method for producing a silicon target structure, an Ag film is formed at the join surface of a silicon target, the silicon target is integrated with a copper backing plate by interposing indium solder between the Ag film and the copper backing plate, and the indium solder is heated/melted to join the silicon target to the copper backing plate, thus integrally joining the silicon target to the copper backing plate.

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Inventors:

TSUZUKIHASHI KOJI (JP)
IKEDA HIROSHI (JP)
YASUKAWA TAKAMASA (JP)
KANAI MASAHIRO (JP)

Application Number:

PCT/JP2014/069240

Publication Date:

January 22, 2015

Filing Date:

July 18, 2014

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP (JP)
MITSUBISHI MAT ELECT CHEM CO (JP)

International Classes:

C23C14/34; H01L21/316

Foreign References:

JPH08269704A	1996-10-15
JP2001226763A	2001-08-21
JPS63317667A	1988-12-26
JPH0748667A	1995-02-21

Attorney, Agent or Firm:

SHIGA Masatake et al. (JP)
Masatake Shiga (JP)

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