Title:
MODULE AND SEMICONDUCTOR COMPOSITE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/100630
Kind Code:
A1
Abstract:
A module 10A for use in a semiconductor composite device 1A that supplies direct voltage adjusted by a voltage regulator including a semiconductor active element to a load 30, wherein: the module 10A comprises a capacitor layer 11 including at least one capacitor section, a through hole conductor provided so as to pass through the capacitor section of the capacitor layer 11 in the thickness direction T and used for electrical connection of the capacitor section and at least one of the voltage regulator 20 and the load 30, and a connection terminal layer electrically connected to the through hole conductor and used for electrical connection of the capacitor section and at least one of the voltage regulator 20 and the load 30; the capacitor layer 11 has a first main surface 11a and a second main surface 11b opposite each other in the thickness direction T; the connection terminal layer includes a first anode connection terminal layer 13Aa provided to the first main surface 11a side of the capacitor layer 11, a second anode connection terminal layer 14Aa provided to the second main surface 11b side of the capacitor layer 11, a first cathode connection terminal layer 13Ba provided to the first main surface 11a side of the capacitor layer 11, and a second cathode connection terminal layer 14Ba provided to the second main surface 11b side of the capacitor layer 11; each of the first anode connection terminal layer 13Aa and the second anode connection terminal layer 14Aa is electrically connected to an anode of the capacitor section C1, and each of the first cathode connection terminal layer 13Ba and the second cathode connection terminal layer 14Ba is electrically connected to a cathode layer 56A of the capacitor section C1 via a via conductor 82; when viewed from the thickness direction T, all of the first anode connection terminal layer 13Aa and the first cathode connection terminal layer 13Ba and all of the cathode layer 56A overlap by at least 90% in terms of area with reference to the total area of the cathode layer 56A; and when viewed from the thickness direction T, all of the second anode connection terminal layer 14Aa and the second cathode connection terminal layer 14Ba and all of the cathode layer 56A overlap by at least 90% in terms of area with reference to the total area of the cathode layer 56A.
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Inventors:
OTANI SHINJI (JP)
Application Number:
PCT/JP2022/042215
Publication Date:
June 08, 2023
Filing Date:
November 14, 2022
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01L25/00; H01G4/228; H01G4/33; H01G4/38; H01G9/012; H01G9/048
Domestic Patent References:
| WO2019221046A1 | 2019-11-21 |
Foreign References:
| JP2020167361A | 2020-10-08 |
Attorney, Agent or Firm:
WISEPLUS IP FIRM (JP)
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