Title:
MTJ DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/103810
Kind Code:
A1
Abstract:
Provided in the present invention is an MTJ device. The MTJ device comprises: a fixed layer, an insulating barrier layer and a free layer which are sequentially stacked, wherein the fixed layer and the free layer are perpendicularly magnetized; the thickness of the free layer is larger than the diameter of the MTJ device; the free layer comprises a first free layer and a second free layer which are stacked; the first free layer comes into contact with the insulating barrier layer; the second free layer is located on a lateral surface, away from the insulating barrier layer, of the first free layer; and the magnetic damping coefficient of the second free layer is less than 0.002. The MTJ device in the present invention has a relatively low write-in current, the data storage time may be prolonged, and at the same time, the storage density of the MRAM can be improved.
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Inventors:
HE SHIKUN (CN)
YANG XIAOLEI (CN)
YANG XIAOLEI (CN)
Application Number:
PCT/CN2020/118729
Publication Date:
June 03, 2021
Filing Date:
September 29, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/08; H01L43/02
Foreign References:
| CN107667438A | 2018-02-06 | |||
| CN107946456A | 2018-04-20 | |||
| CN110061128A | 2019-07-26 | |||
| US9337415B1 | 2016-05-10 | |||
| CN105957961A | 2016-09-21 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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