Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/045019
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first conductive layer, a second conductive layer, and a gate electrode. The second nitride-based semiconductor layer is disposed over the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The first conductive layer is disposed over the second nitride-based semiconductor layer and has a top surface and a plurality of recesses at the top surface. The second conductive layer at least fills into the recesses, in which the first conductive layer comprises at least one first element excluded in the second conductive layer. The gate electrode is disposed over the first conductive layer and the second conductive layer.
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Inventors:
ZHANG XIAOYAN (CN)
ZHANG JINHAN (CN)
WONG KING YUEN (CN)
ZHANG JINHAN (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2022/116103
Publication Date:
March 07, 2024
Filing Date:
August 31, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L21/28; H01L21/335; H01L29/423
Foreign References:
| CN114303248A | 2022-04-08 | |||
| CN114127931A | 2022-03-01 | |||
| CN107170818A | 2017-09-15 | |||
| CN113140514A | 2021-07-20 | |||
| US11201234B1 | 2021-12-14 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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