NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE

Title:

NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2022/062974

Kind Code:

A1

Abstract:

Provided in the embodiments of the present application is a nitride epitaxial structure, comprising: a substrate; a nucleation layer formed on the substrate, the nucleation layer being an aluminum nitride layer or a gallium nitride layer; a buffer layer formed on the nucleation layer, comprising K group III nitride double-layer structures that are stacked, wherein K≥3, each double-layer structure comprises an upper layer and a lower layer that are stacked, the band gap difference of each double-layer structure is the difference between the width of forbidden band of an upper layer material and the width of forbidden band of a lower layer material, and the band gap differences of the K double-layer structures show a gradual trend along the thickness direction of the buffer layer as a whole; and an epitaxial layer formed on the buffer layer, the material of the epitaxial layer comprising a group III nitride. By means of providing a buffer layer that has a plurality of double-layer structures having band gap difference gradients, the lattice mismatch between the substrate and the epitaxial layer may be effectively alleviated, and the crystal quality and withstand voltage performance may be well balanced, thereby effectively improving the performance of the semiconductor device. Also provided in the embodiments of the present application is a semiconductor device comprising the nitride epitaxial structure.

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Inventors:

CHEN ZHIBIN (CN)
LUO RUIHONG (CN)

Application Number:

PCT/CN2021/118342

Publication Date:

March 31, 2022

Filing Date:

September 14, 2021

Export Citation:

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Assignee:

HUAWEI TECH CO LTD (CN)

International Classes:

H01L21/02; H01L29/06

Foreign References:

CN104885198A	2015-09-02
CN109216520A	2019-01-15
CN103236477A	2013-08-07
CN103806104A	2014-05-21
US20130168691A1	2013-07-04
CN202011025013A	2020-09-25

Other References: