Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND ITS WRITE METHOD
Document Type and Number:
WIPO Patent Application WO/2007/023569
Kind Code:
A1
Abstract:
A nonvolatile semiconductor storage device includes: a common electrode (38);
a resistance storage layer (42) formed on the common electrode (38) in such a way
that it is switched between a high resistance state and a low resistance state
by application of voltage; and a resistance storage element (46) having a plurality
of separate electrodes formed on the resistance storage layer (42). A plurality
of memory regions for independently storing the high resistance state and the
low resistance state are formed in the resistance storage layer between the common
electrode (38) and the separate electrodes (44). Thus, it is possible to obtain
a minute resistance storage element and improve the integration degree of the
nonvolatile semiconductor storage device.
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Inventors:
KINOSHITA KENTARO (JP)
Application Number:
PCT/JP2005/015579
Publication Date:
March 01, 2007
Filing Date:
August 26, 2005
Export Citation:
Assignee:
FUJITSU LTD (JP)
KINOSHITA KENTARO (JP)
KINOSHITA KENTARO (JP)
International Classes:
H01L21/8246; G11C13/00; H01L27/105; H01L45/00
Foreign References:
| JPS504986A | 1975-01-20 | |||
| JPH07263646A | 1995-10-13 | |||
| JPS4934390B1 | 1974-09-13 |
Attorney, Agent or Firm:
KITANO, Yoshihito (Daikyo-cho Shinjuku-k, Tokyo 15, JP)
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