Title:
OXIDE SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR, AND OXIDE THIN FILM FORMED USING OXIDE SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2020/031410
Kind Code:
A1
Abstract:
Provided is an oxide sputtering target characterized in that MoO2 and In2O3 are contained, the Mo content ratio satisfies 0.1≤Mo/(In+Mo)≤0.8 in atomic ratio, and the relative density is 80% or more. Provided is a production method for an oxide sputtering target, the method being characterized by hot-press sintering an indium oxide powder and a molybdenum oxide powder in a reducing gas atmosphere or an inert atmosphere. The present invention addresses the problem of providing an oxide sputtering target which has a high density, and a production method therefor.
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Inventors:
NARA ATSUSHI (JP)
MUNEYASU KEI (JP)
MUNEYASU KEI (JP)
Application Number:
PCT/JP2019/008796
Publication Date:
February 13, 2020
Filing Date:
March 06, 2019
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C04B35/01; C23C14/34
Foreign References:
| JP2002256423A | 2002-09-11 | |||
| JP2005258115A | 2005-09-22 | |||
| JP2002275624A | 2002-09-25 | |||
| JP2000077358A | 2000-03-14 | |||
| JP2009510263A | 2009-03-12 |
Attorney, Agent or Firm:
OGOSHI Kazuteru et al. (JP)
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