Title:
PASSIVATION TREATMENT METHOD, METHOD FOR FORMING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2016/170988
Kind Code:
A1
Abstract:
[Problem] The purpose is to reduce the density of defects on the surface of a germanium or Group III-V element material.
[Solution] Provided is a passivation treatment method comprising the steps of: placing a substrate made from germanium (Ge) or a Group III-V element on a mounting table in a treatment chamber; and supplying both a hydrogen sulfide (H2S) gas or a hydrogen selenide (H2Se) gas and an ammonia (NH3) gas into the treatment chamber to form a passivation film containing sulfur (S) or selenium (Se) on the substrate.
Inventors:
LIN JUN (JP)
KAWAGUCHI SHINICHI (JP)
MORIYA SHUJI (JP)
MURAKI YUSUKE (US)
KAWAGUCHI SHINICHI (JP)
MORIYA SHUJI (JP)
MURAKI YUSUKE (US)
Application Number:
PCT/JP2016/061322
Publication Date:
October 27, 2016
Filing Date:
April 06, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/314; H01L21/336; H01L29/78
Domestic Patent References:
| WO2016007733A1 | 2016-01-14 |
Foreign References:
| JPS58141576A | 1983-08-22 | |||
| JPH04236424A | 1992-08-25 | |||
| JP2007123895A | 2007-05-17 | |||
| JP2011091394A | 2011-05-06 | |||
| US20100163937A1 | 2010-07-01 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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